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Posted by: rayemit
Created on: May 31 03:21 AM
Expires on: Jul 15 03:47 AM
Price:Other Other:"best Offer"
City area: Beijing, Beijing (China)
Wolfspeed s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium ****nide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.For more information please visit www.rayemit.com